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Preparation of irregular silica nano-abrasives for the chemical mechanical polishing behaviour on sapphire substrates

机译:制备不规则二氧化硅纳米磨料,以在蓝宝石衬底上进行化学机械抛光

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摘要

Abrasives directly affect the polishing rate and surface quality for sapphire chemical mechanical polishing (CMP). In this work, irregular silica nano-abrasives were synthesised by nickel ion-induced effect combined with growth method in order to simultaneously acquire a high polishing rate and a smooth and flat surface quality on sapphire. The synthesis process of irregular silica nano-abrasives is predicted and analysed by zeta potential. The irregular silica nano-abrasives have a distinguished CMP behaviour for a 22.72% increase in polishing rate and a flat surface quality of sapphire. X-ray photoelectron spectroscopy analysis results have confirmed these solid-phase chemical reactions happen during the sapphire CMP process. In addition, it was analysed about the polishing process and mechanism by establishing a contact model between nano-abrasives and sapphire.
机译:磨料直接影响蓝宝石化学机械抛光(CMP)的抛光速率和表面质量。在这项工作中,不规则的二氧化硅纳米磨料是通过镍离子诱导作用与生长方法相结合而合成的,以同时获得高抛光速率和对蓝宝石的平滑表面质量。通过ζ电势预测并分析了不规则二氧化硅纳米磨料的合成过程。不规则的二氧化硅纳米磨料具有杰出的CMP行为,抛光速率提高了22.72%,蓝宝石的表面质量平坦。 X射线光电子能谱分析结果已经证实了这些固相化学反应是在蓝宝石CMP过程中发生的。此外,通过建立纳米磨料与蓝宝石之间的接触模型,对抛光过程和抛光机理进行了分析。

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