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Development of athermal and isothermalε-martensite in atomized Co-Cr-Mo-C implant alloy powders

机译:雾化Co-Cr-Mo-C植入合金粉末中非热和等温ε-马氏体的研制

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摘要

In this work, CoCr-Mo compacted powders were sintered at 900°C to 1300°C for 1 to 2 hours and conditions for total carbide dissolution in fcc cobalt were determined. Accordingly, it was found that sintering at temperatures between 900°C to 1100°C led to removal of the dendritic structure and to carbide precipitation at the grain boundaries (gbs), as well as in the bulk. Moreover, recrystallization and grain growth were always found to occur during powder sintering. At temperatures above 1100°C, no carbide precipitation occurred indicating that carbides were not stable at these temperatures. Hence, compact powders were annealed at 1150°C to promote the development of a single-phase fcc solid solution. This was followed by rapid cooling to room temperature and then aging at 800°C for 0 to 18 hours. Rapid cooling from 1150°C promoted the development of up to 64 pct athermal ε-martensite through the face-centered cubic (fcc) → hexagonal crystal structure (hcp) martensitic transformation. The athermal martensite was associated with the development of a network of parallel arrays of fine straight transgranular markings within the fcc matrix. Moreover, aging at 800°C for 15 hours led to the development of 100 pct isothermal hcp ε-martensite. From the experimental outcome, it is evident that isothermal ε-martensite is the most stable form of the hcp Co phase. Apparently, during aging at 800°C, the excess defects expected in athermal martensite are removed by thermally activated processes and by the development of isothermal ε-martensite, which has the appearance of “pearlite.”
机译:在这项工作中,将CoCr-Mo压实粉末在900°C至1300°C的温度下烧结1-2小时,并确定了碳化物在fcc钴中的总溶解条件。因此,发现在900℃至1100℃之间的温度下烧结导致树枝状结构的去除和碳化物在晶界(gbs)以及整体上的沉淀。而且,总是发现在粉末烧结期间发生重结晶和晶粒长大。在高于1100°C的温度下,未发生碳化物沉淀,表明碳化物在这些温度下不稳定。因此,致密粉末在1150°C退火,以促进单相fcc固溶体的发展。随后快速冷却至室温,然后在800°C老化0至18小时。通过面心立方(fcc)→六方晶体结构(hcp)马氏体相变,从1150°C快速冷却促进了多达64 pct无热ε-马氏体的发展。无热马氏体与fcc基质中细笔直的跨晶标记平行阵列网络的发展有关。此外,在800°C下老化15小时导致了100 pct等温hcpε-马氏体的发展。从实验结果可以看出,等温ε-马氏体是hcp Co相的最稳定形式。显然,在800°C的时效过程中,通过热活化过程和等温ε-马氏体的发展(具有“珠光体”的外观)可以消除无热马氏体中多余的缺陷。

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  • 来源
    《Metallurgical and Materials Transactions A》 |2006年第11期|3197-3204|共8页
  • 作者单位

    School of Advanced Materials Engineering Kongju National University Kongju 314-701 Chungnam South Korea;

    School of Advanced Materials Engineering Kongju National University Kongju 314-701 Chungnam South Korea;

    Materials Department University of Wisconsin-Milwaukee 53201 Milwaukee WI;

    Materials Department University of Wisconsin-Milwaukee 53201 Milwaukee WI;

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