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Microstructure and Impression Creep Characteristics of Cast Mg-5Sn-xBi Magnesium Alloys

机译:铸造Mg-5Sn-xBi镁合金的组织和蠕变特性

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The microstructure and creep behavior of a cast Mg-5Sn alloy with 1, 2, and 3 wt pct Bi additions were studied by impression tests in the temperature range 423 K to 523 K (150 °C to 250 °C) under punching stresses in the range 125 to 475 MPa for dwell times up to 3600 seconds. The alloy containing 3 wt pct Bi showed the lowest creep rates and, thus, the highest creep resistance among all materials tested. This is attributed to the favorable formation of the more thermally stable Mg3Bi2 intermetallic compound, the reduction in the volume fraction of the less stable Mg2Sn phase, and the dissolution of Bi in the remaining Mg2Sn particles. These particles strengthen both the matrix and grain boundaries during creep deformation of the investigated system. The creep behavior of the Mg-5Sn alloy can be divided into the low- and high-stress regimes, with the respective average stress exponents of 5.5 and 10.5 and activation energies of 98.3 and 163.5 kJ mol−1. This is in contrast to the creep behavior of the Bi-containing alloys, which can be expressed by a single linear relationship over the whole stress and temperature ranges studied, yielding stress exponents in the range 7 to 8 and activation energies of 101.0 to 107.0 kJ mol−1. Based on the obtained stress exponents and activation energies, it is proposed that the dominant creep mechanism in Mg-5Sn is pipe-diffusion controlled dislocation viscous glide the low-stress regime and dislocation climb creep with back stress in the high-stress regime. For the Mg-5Sn-xBi alloys, however, the controlling creep mechanism is dislocation climb with an additional particle strengthening effect, which is characterized by the higher stress exponent of 7 to 8.
机译:通过在423 K至523 K(150°C至250°C)温度范围内的冲切应力下,通过压痕试验研究了添加有1,2和3 wt pct Bi的Mg-5Sn铸造Mg-5Sn合金的组织和蠕变行为。持续时间长达3600秒,在125至475 MPa的范围内。含3 wt pct Bi的合金在所有测试材料中均显示出最低的蠕变速率,因此具有最高的抗蠕变性。这归因于热稳定性更好的Mg 3 Bi 2 金属间化合物的良好形成,稳定性较差的Mg 2 的体积分数降低。 sub> Sn相,Bi在其余Mg 2 Sn颗粒中的溶解。在研究系统的蠕变变形过程中,这些颗粒会增强基体和晶界。 Mg-5Sn合金的蠕变行为可分为低应力和高应力两种,其平均应力指数分别为5.5和10.5,活化能为98.3和163.5 kJ mol -1 。这与含Bi合金的蠕变行为相反,蠕变行为可以通过研究的整个应力和温度范围内的单个线性关系来表示,应力指数范围为7至8,活化能为101.0至107.0 kJ mol -1 。根据获得的应力指数和活化能,提出Mg-5Sn的主要蠕变机理是在低应力状态下通过管扩散控制的位错粘性滑移,在高应力状态下采用背应力进行位错爬升蠕变。但是,对于Mg-5Sn-xBi合金,控制蠕变机理是位错爬升,并具有额外的颗粒增强作用,其特征在于应力指数为7至8较高。

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