THE MAGNETOCONCENTRATION EFFECT IN THE BASE-SUBSTRATE pn-JUNCTION OF A BIPOLAR MAGNETOTRANSISTOR

摘要

A negative sensitivity effect in dual-collector lateral npn-type bipolar magnetotransistors, formed in the well, found experimentally, is investigated using instrument-technological modeling. It is established that the sign of the sensitivity is determined by the separation of the electron and hole fluxes in the well-substrate pn-junction in the magnetic field. The modulation of the conductivity in the space-charge region of the pn-junction by the magnetic field is analyzed.