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机译:AlGaN日盲双异质结紫外光电晶体管的设计与优化
Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China,Microwave Devices and Integrated Circuits Department, the Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China;
Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China,Microwave Devices and Integrated Circuits Department, the Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China;
ZhuZhou CRRC Times Electric CO., LTD., Zhuzhou, Hunan, China;
Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China,Microwave Devices and Integrated Circuits Department, the Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China;
Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China,Microwave Devices and Integrated Circuits Department, the Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China;
AlGaN; Solar-blind; UV detector; Phototransistor; Polarization effect;
机译:全透明高性能太阳能盲,ITO / P-NIO / N-ZNO紫外异质结双极光电晶体管
机译:用于太阳盲紫外线检测的ZnS /碳量子点异质结晶体管
机译:通过MOCVD对基于后照射的Algan的太阳盲紫外光探测器的ALN模板的优化生长
机译:基于太阳盲AlGaN焦平面阵列的紫外电晕放电成像仪的设计与实现
机译:基于N沟道InGaAsP-InP的倒置通道技术器件(ICT)的设计,制造和表征,用于光电集成电路(OEIC):双异质结光电开关(DOES),异质结场效应晶体管(HFET),双极倒置沟道场-效应晶体管(BICFET)和双极型反向沟道光电晶体管(BICPT)。
机译:基于Algan的太阳盲紫外光探测器和焦平面阵列的进展
机译:单片集成的基于AlGaN / GaN / AlN的日盲紫外和近红外探测器
机译:用于光学神经网络的高增益alGaas / Gaas双异质结达林顿光电晶体管