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机译:准选择性外延生长模式中窄深4H-SiC沟槽的CVD填充
National Institute of Advanced Industrial Science and Technology;
R & D Partnership for Future Power Electronics Technology;
National Institute of Advanced Industrial Science and Technology;
National Institute of Advanced Industrial Science and Technology;
Fujielectric Co.,Ltd.;
National Institute of Advanced Industrial Science and Technology;
National Institute of Advanced Industrial Science and Technology;
National Institute of Advanced Industrial Science and Technology;
National Institute of Advanced Industrial Science and Technology;
National Institute of Advanced Industrial Science and Technology (AIST);
National Institute of Advanced Industrial Science and Technology;
National Institute of Advanced Industrial Science and Technology;
Selective Epitaxial Growth; Super-Junction; HCl; CVD; 4H-SiC; P-Type; Trench Filling;
机译:生长压力对CVD法填充4H-SiC沟槽的影响
机译:CVD生长参数填充50微米深4H-SIC沟槽的研究
机译:通过在CVD工艺中添加HCl来填充4H-SiC沟槽以进行选择性外延生长
机译:准选择性外延生长模式中的CVD填充窄深4H-SIC沟槽
机译:用于光电子应用的外延Si-Ge-Sn合金的RPCVD生长
机译:各种缺陷对4H-SiC肖特基二极管性能的影响及其与外延生长条件的关系
机译:使用二氯硅烷的高生长速率4H-siC外延生长 热壁CVD反应器