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Long duration stabilization of porous silicon membranes in physiological media: Application for implantable reactors

机译:生理介质中多孔硅膜的长期稳定化:可植入反应器的应用

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摘要

The natural biodegradabilty of porous silicon (pSi) in physiological media limits its wider usage for implantable systems. We report the stabilization of porous silicon (pSi) membranes by chemical surface oxidation using RCA1 and RCA2 protocols, which was followed by a PEGylation process using a silane-PEG. These surface modifications stabilized the pSi to allow a long period of immersion in PBS, while leaving the pSi surface sufficiently hydrophilic for good filtration and diffusion of several biomolecules of different sizes without any blockage of the pSi structure. The pore sizes of the pSi membranes were between 5 and 20 nm, with the membrane thickness around 70 mu m. The diffusion coefficient for fluorescein through the membrane was 2 x 10(-19) cm(2) s(-1), and for glucose was 2.2 x 10(-9) cm(2) s(-1). The pSi membrane maintained that level of glucose diffusion for one month of immersion in PBS. After 2 months immersion in PBS the pSi membrane continued to operate, but with a reduced glucose diffusion coefficient. The chemical stabilization of pSi membranes provided almost 1 week stable and functional biomolecule transport in blood plasma and opens the possibility for its short-term implantation as a diffusion membrane in biocompatible systems.
机译:生理介质中多孔硅(pSi)的自然生物降解性限制了其在可植入系统中的广泛使用。我们报告了使用RCA1和RCA2协议通过化学表面氧化对多孔硅(pSi)膜的稳定作用,随后使用硅烷-PEG进行了PEG化。这些表面修饰使pSi稳定下来,可以长时间浸泡在PBS中,同时使pSi表面具有足够的亲水性,可以很好地过滤和扩散几种不同大小的生物分子,而不会阻塞pSi结构。 pSi膜的孔径在5到20 nm之间,膜厚约70微米。荧光素通过膜的扩散系数为2 x 10(-19)cm(2)s(-1),而葡萄糖的扩散系数为2.2 x 10(-9)cm(2)s(-1)。 pSi膜在浸入PBS的一个月内保持葡萄糖扩散水平。浸入PBS 2个月后,pSi膜继续运行,但葡萄糖扩散系数降低。 pSi膜的化学稳定性可在血浆中提供近1周的稳定和功能性生物分子运输,并为将其短期植入生物相容性系统中的扩散膜开辟了可能性。

著录项

  • 来源
    《Materials science & engineering》 |2020年第3期|110359.1-110359.10|共10页
  • 作者

  • 作者单位

    ISA Dept LSA 5 Rue Doua F-69100 Villeurbanne France;

    Univ Grenoble Alpes CNRS TIMC IMAG Fac Med SyNaBi UMR 5525 F-38706 La Tronche France;

    Univ Grenoble Alpes CNRS DCM UMR 5250 F-38000 Grenoble France;

    CEA DRT DTBS LETI Grenoble 17 Ave Martyrs F-38054 Grenoble 9 France;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Porous silicon; Surface modification; Diffusion; Stabilization;

    机译:多孔硅表面改性;扩散;稳定化;

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