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首页> 外文期刊>Materials Science and Engineering >First-principles investigations of structural parameters, electronic structures and optical spectra of 5-5- and BeO-type of ZnO_(1-x)S_x alloys
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First-principles investigations of structural parameters, electronic structures and optical spectra of 5-5- and BeO-type of ZnO_(1-x)S_x alloys

机译:第一批原理调查结构参数,电子结构和光谱为5-5- ZnO_(1-x)S_x合金

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摘要

Due to the multifunctionality of the ZnO and its physical robustness, substantial research is focused on its alloying with different materials. Here, we investigate the optoelectronic properties of mutual alloying of 5-5 type and BeO type of ZnO with ZnS (such as ZnO_(1-x)S_x for x = 0, 0.25, 0.50, 0.75, and 1). By using density functional theory (DFT), calculations for the structural, electronic, and optical properties of 5-5 type and BeO type ZnO_(1-x)S_x are carried out. We have noticed that the incorporation of S atom in 5-5 type ZnO_(1-x)S_x has reduced its bandgap from 3.12 eV to 2.63 eV. On the other hand, a remarkable improvement from 2.85 eV to 3.75 eV in the bandgaps of BeO type ZnO_(1-x)S_x has been observed which makes the BeO type ZnO_(1-x)S_x more favorable for the future optoelectronic applications. Furthermore, the valence band maximum of 5-5 type ZnO_(1-x)S_x is strongly affected by the S composition, as a result, the nature of the bandgap has been transformed from direct to indirect bandgap at x = 0.50 composition. The imaginary part of the dielectric function, the onset of the absorption spectrum, and conductivity are found to experience a redshift. Whereas the static dielectric constants and static refractive indices are found to be increased with S content in both types of ZnO_(1-x)S_x alloys. Our results show that BeO type ZnO_(1-x)S_x alloys are relatively promising candidates for optoelectronic devices.
机译:由于ZnO的多功能性及其物理稳健性,大量研究专注于其用不同材料的合金化。在这里,我们研究了用ZnS(例如ZnO_(1-x)S_X的5-5型和BEO型ZnO的相互合金化的光电性能(例如X = 0,0.25,0.50,0.75和1)。通过使用密度泛函理论(DFT),执行5-5型和荧光型ZnO_(1-x)S_x的结构,电子和光学性质的计算。我们注意到,在5-5型ZnO_(1-x)S_X中的S原子内的掺入已经将其带隙从3.12 ev降至2.63eV。另一方面,已经观察到Beo型ZnO_(1-x)S_X的带盖中的2.85eV至3.75eV的显着改进,使BEO型ZnO_(1-X)S_X更有利地对未来的光电应用。此外,由S组合物强烈影响5-5型ZnO_(1-x)S_x的价带,结果,该带隙的性质已经从X = 0.50组合物直接转化为间接带隙。发现介质函数的虚部,吸收光谱的开始和导电性的发作来体验到红移。虽然发现静电介电常数和静态折射率在两种类型的ZnO_(1-x)S_x合金中增加了含量。我们的结果表明,BEO型ZnO_(1-X)S_X合金是光电器件的相对希望的候选者。

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  • 来源
    《Materials Science and Engineering》 |2020年第12期|114697.1-114697.12|共12页
  • 作者单位

    Department of Physics Faculty of Science Universiti. Teknologi Malaysia UTM Skudai 81310 Johor Malaysia;

    Department of Physics Faculty of Science Universiti. Teknologi Malaysia UTM Skudai 81310 Johor Malaysia;

    Advanced Functional Materials & Optoelectronics Laboratory (AFMOL) Department of Physics Faculty of Science King Khalid University P. O. Box 9004 Abha Saudi Arabia;

    Department of Physics Faculty of Science Universiti. Teknologi Malaysia UTM Skudai 81310 Johor Malaysia Center for High Energy Physics University of the Punjab Quid-e-Azam Campus Lahore 54590 Pakistan;

    Advanced Functional Materials & Optoelectronics Laboratory (AFMOL) Department of Physics Faculty of Science King Khalid University P. O. Box 9004 Abha Saudi Arabia;

    Center for High Energy Physics University of the Punjab Quid-e-Azam Campus Lahore 54590 Pakistan;

    Department of Physics and Astronomy College of Science King Saud University Riyadh 11451 King Saudi Arabia;

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