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首页> 外文期刊>Materials Science and Engineering >An investigation on phase transition behaviors in MgO-doped Pb_(0.99)(Zr_(0.95)Ti_(0.05))_(0.98)Nb_(0.02)O_3 ferroelectric ceramics by Raman and dielectric measurements
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An investigation on phase transition behaviors in MgO-doped Pb_(0.99)(Zr_(0.95)Ti_(0.05))_(0.98)Nb_(0.02)O_3 ferroelectric ceramics by Raman and dielectric measurements

机译:掺MgO的Pb_(0.99)(Zr_(0.95)Ti_(0.05))_(0.98)Nb_(0.02)O_3铁电陶瓷的相变行为的拉曼和介电测量研究

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摘要

The phase transition behaviors of Pb_(0.99)(Zr_(0.95)Ti_(0.05))_(0.98)Nb_(0.02)O_3 ferroelectric ceramics doped with different MgO concentrations (0-0.2 wt%) were systematically investigated by Raman and dielectric measurements. Raman results showed that the phase transitions were strongly dependent on MgO concentration. It was found that the low temperature rhombohedral (F_(R(LT)))-high temperature rhom-bohedral (F_(R(HT))) ferroelectric phase transition shifted toward a lower temperature with increasing MgO concentration up to 0.1 wt%, while the F_(R(HT))-cubic paraelectric (P_C) phase transition changed to a higher temperature. The Raman results were in good agreement with phase transition determined by dielectric measurements. Moreover, it was indicated that the changes of Raman active modes were related to distortion of BO_6 octahedra during the phase transitions. Then, the distortion of BO_6 octahedron caused by B-site replacement of Mg~(2+) ions was proposed to explain the observed behaviors. In addition, the effects of MgO doping on the dielectric, ferroelectric and pyroelectric properties were also discussed.
机译:通过拉曼光谱和电介质测量系统研究了掺杂了不同MgO浓度(0-0.2 wt%)的Pb_(0.99)(Zr_(0.95)Ti_(0.05))_(0.98)Nb_(0.02)O_3铁电陶瓷的相变行为。拉曼结果显示,相变强烈依赖于MgO浓度。发现低温菱形(F_(R(LT)))-高温菱形-面体(F_(R(HT)))铁电相变随着MgO浓度增加到0.1 wt%而向较低温度移动,而F_(R(HT))-立方顺电(P_C)相变转变为更高的温度。拉曼结果与通过介电测量确定的相变非常吻合。此外,表明在相变期间拉曼活性模式的变化与BO_6八面体的变形有关。然后,提出了由Mg〜(2+)离子的B位置换引起的BO_6八面体的畸变,以解释所观察到的行为。此外,还讨论了MgO掺杂对介电,铁电和热电性质的影响。

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  • 来源
    《Materials Science and Engineering 》 |2015年第3期| 170-174| 共5页
  • 作者单位

    Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China,State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010, China;

    Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;

    Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;

    Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;

    Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;

    Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    PZT 95/5 ceramics; Phase transition; Raman; Dielectric properties;

    机译:PZT 95/5陶瓷;相变;拉曼介电性能;

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