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首页> 外文期刊>Materials Science and Engineering. A, Structural Materials: Properties, Microstructure and Processing >Metastable phases and spinodal decomposition in Ti_(1-x)Al_xN system studied by ab initio and thermodynamic modeling, a comparison with the TiN-Si_3N_4 system
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Metastable phases and spinodal decomposition in Ti_(1-x)Al_xN system studied by ab initio and thermodynamic modeling, a comparison with the TiN-Si_3N_4 system

机译:通过从头算和热力学建模研究Ti_(1-x)Al_xN系统中的亚稳态相和旋节线分解,并与TiN-Si_3N_4系统进行比较

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摘要

The total energies and lattice constants of binary hcpd- and fcc-TiN, AlN and ternary Ti_(0.5)Al_(0.5)N phases are calculated by ab initio method using the Vienna ab initio simulation package (VASP). The values of total energies are then used to calculate the lattice stabilities of binary hcp- and fcc-TiN, AlN and the interaction parameter of ternary Ti_(1-x)Al_xN phases on the basis of the semiempirical, thermodynamic sub-lattice model. Based on these data, the Gibbs free energy diagram of the immiscible quasi-binary TiN-AlN system are constructed in order to discuss the relative phase stability of the metastable ternary hcp- and fcc-Ti_(1-x)Al_xN phases over the entire range of compositions. The prediction is compared with the published results from PVD and CVD experiments. The calculated lattice energy and the constructed Gibbs free energy diagram show, in agreement with the experiments, that metastable fcc-Ti_(1-x)Al_xN coatings can easily undergo spinodal decomposition into coherent fcc-TiN and fcc-AlN, but there is a relatively large barrier for the formation of the stable hcp-AlN. A comparison with the TiN-Si_3N_4 system shows that, due to the much higher de-mixing energy of this system as compared to the TiN-AlN one, spinodal decomposition may occur in that system also for semicoherent TiN and Si_3N_4 phases.
机译:二元hcpd-和fcc-TiN,AlN和三元Ti_(0.5)Al_(0.5)N相的总能量和晶格常数是使用Vienna从头算模拟程序包(VASP)通过从头算法计算的。然后,在半经验热力学亚晶格模型的基础上,使用总能量值来计算二元hcp-和fcc-TiN,AlN的晶格稳定性以及三元Ti_(1-x)Al_xN相的相互作用参数。基于这些数据,构建了不混溶的准二元TiN-AlN系统的吉布斯自由能图,以便讨论整个亚稳态三元hcp-和fcc-Ti_(1-x)Al_xN相的相对相稳定性。成分范围。将该预测结果与PVD和CVD实验发表的结果进行了比较。计算得出的晶格能和吉布斯自由能图表明,与实验一致,亚稳态的fcc-Ti_(1-x)Al_xN涂层可以容易地旋节线分解为相干的fcc-TiN和fcc-AlN。形成稳定的hcp-AlN的障碍相对较大。与TiN-Si_3N_4系统的比较表明,由于与TiN-AlN相比,该系统的去混合能高得多,因此对于半相干TiN和Si_3N_4相,该系统中也可能发生旋节线分解。

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