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首页> 外文期刊>Thin Solid Films >Phase stabilities of self-organized nc-TiN/a-Si_3N_4 nanocomposites and of Ti_(1-x)Si_xN_y solid solutions studied by ab initio calculation and thermodynamic modeling
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Phase stabilities of self-organized nc-TiN/a-Si_3N_4 nanocomposites and of Ti_(1-x)Si_xN_y solid solutions studied by ab initio calculation and thermodynamic modeling

机译:通过从头算和热力学模型研究自组织的nc-TiN / a-Si_3N_4纳米复合材料和Ti_(1-x)Si_xN_y固溶体的相稳定性

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摘要

Bulk properties of stable binary fcc-TiN and hcp(β)-Si_3N_4, hypothetical fcc-SiN and hcp(β)-Ti_3N_4, and ternary Ti_(1-x)Si_xN_y phases are calculated by ab initio method. The values of total energies are then used for thermodynamic calculations of the lattice instabilities of hypothetical binary phases of fcc-SiN and hcp-Ti_3N_4, and of the interaction parameters of ternary Ti_(1-x)Si_xN_y phases. Based on these data, Gibbs free energy diagrams of the quasi-binary TiN_y-SiN_y system are constructed in order to study the relative phase stability of the metastable ternary fcc- and hcp-Ti_(1-x)Si_xN_y phases over the entire range of compositions. The results are supported by the published data from chemical and physical vapor deposition experiments. The constructed Gibbs free energy diagram and phase selection diagram of quasi-binary TiN_y-SiN_y system in fcc structure show that metastable fcc-Ti_(1-x)Si_xN coatings should undergo chemically spinodal decomposition into coherent fcc-TiN and fcc-SiN. Due to a high lattice mismatch between fcc-TiN and hcp-Si_3N_4, and to much higher lattice instability of fcc-SiN with respect to stable hcp-Si_3N_4, only about one monolayer of pseudomorphic SiN_y interfacial phase is stable.
机译:通过从头算方法计算出稳定的二元fcc-TiN和hcp(β)-Si_3N_4,假设的fcc-SiN和hcp(β)-Ti_3N_4以及三元Ti_(1-x)Si_xN_y的体积性质。然后,将总能量的值用于热力学计算fcc-SiN和hcp-Ti_3N_4的假设二元相的晶格不稳定性,以及三元Ti_(1-x)Si_xN_y相的相互作用参数。根据这些数据,构造准二元TiN_y-SiN_y系统的吉布斯自由能图,以研究亚稳态三元fcc-相和hcp-Ti_(1-x)Si_xN_y相在整个范围内的相对相稳定性。成分。这些结果得到了化学和物理气相沉积实验的公开数据的支持。 fcc结构中准二元TiN_y-SiN_y系统的吉布斯自由能图和相选择图表明,亚稳态fcc-Ti_(1-x)Si_xN涂层应经过化学旋节分解分解为相干的fcc-TiN和fcc-SiN。由于fcc-TiN和hcp-Si_3N_4之间的晶格高度不匹配,以及fcc-SiN相对于稳定的hcp-Si_3N_4更高的晶格不稳定性,仅约一个单层的伪晶SiN_y界面相是稳定的。

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