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Molecular dynamics study of scratching velocity dependency in AFM-based nanometric scratching process

机译:基于AFM的纳米刮擦过程中刮擦速度依赖性的分子动力学研究

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摘要

Three-dimensional molecular dynamics simulations are performed to investigate the AFM-based nanometric scratching process of monocrystalline copper. The effects of scratching velocities (1, 10, and 100 m/s) on the chip pattern, scratching resistance, dislocation movement, and workpiece deformation are studied. The results show that the scratching resistance increases with the increase in scratching velocity. The higher scratching velocity results in larger chip volume and closer chip shape with more amorphous structure. The dislocations move well-regulated for lower velocities (1 and 10 m/s) than that for larger one (100 m/s). The area of workpiece material deformation region beneath the tool edge decreases with the increase in scratching velocity.
机译:进行了三维分子动力学模拟,以研究基于AFM的单晶铜纳米刮擦过程。研究了刮擦速度(1、10和100 m / s)对切屑图案,耐刮擦性,位错运动和工件变形的影响。结果表明,耐刮擦性随刮擦速度的增加而增加。较高的刮擦速度会导致更大的切屑体积和更紧密的切屑形状,以及更多的非晶结构。对于较低的速度(1和10 m / s),与较大的速度(100 m / s)相比,位错运动受到良好的控制。刀具边缘下方的工件材料变形区域的面积随刮擦速度的增加而减小。

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