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首页> 外文期刊>Materials Science and Engineering >Influence of stacking fault energy and temperature on microstructures and mechanical properties of fcc pure metals processed by equal-channel angular pressing
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Influence of stacking fault energy and temperature on microstructures and mechanical properties of fcc pure metals processed by equal-channel angular pressing

机译:堆垛层错能和温度对等通道角向压制FCC纯金属的组织和力学性能的影响

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摘要

Three fcc pure metals-Cu, Ni, and Al, with the same purity level (~9.99 wt%) and different stacking fault energies (SFEs, about 45 mJ/m~2,125 mJ/m~2, and 166 mJ/m~2, respectively) are processed by equal-channel angular pressing (ECAP) at different temperatures (room temperature, 0.32T_m, and 0.4T_m). A dislocation density-based model is improved by introducing a material-dependent parameter, and the improved model is utilized to predict the evolution of dislocation density, grain size, and strength of materials processed by ECAP processing. The predicted dislocation density, grain size, and strength are compared with the experimental results, with satisfactory agreement. The influence of the SFE on the steady-state grain size d_s is discussed, based on the experimental and modeling results. It is demonstrated that at the same homologous temperatures, the dependence of the d_s on the SFE exists, and that a reduction in the SFE leads to a decrease in the d_s, in case there is no recrystallization in the samples. In addition, increasing deformation temperature leads to a decrease in the dislocation densities and an increase in the steady-state grain size d_s. The predicted values of the d_s match well with the experimental results at lower homologous temperatures.
机译:三种fcc纯金属-铜,镍和铝,具有相同的纯度水平(〜9.99 wt%)和不同的堆垛层错能(SFE,分别为45 mJ / m〜2,125 mJ / m〜2和166 mJ / m〜通过分别在不同温度(室温,0.32T_m和0.4T_m)下的等通道角挤压(ECAP)进行处理。通过引入与材料有关的参数,改进了基于位错密度的模型,该改进的模型用于预测位错密度,晶粒尺寸和通过ECAP处理的材料强度的演变。将预测的位错密度,晶粒尺寸和强度与实验结果进行比较,结果令人满意。根据实验和建模结果,讨论了SFE对稳态晶粒尺寸d_s的影响。结果表明,在相同的同源温度下,存在d_s对SFE的依赖性,并且在样品中不存在重结晶的情况下,SFE的降低会导致d_s的降低。另外,变形温度的升高导致位错密度的降低和稳态晶粒尺寸d_s的增大。 d_s的预测值与较低同源温度下的实验结果非常吻合。

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