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Microstructural control of alloy 718 fabricated by electron beam melting with expanded processing window by adaptive offset method

机译:自适应偏移法通过扩大加工范围的电子束熔化制备的合金718的组织控制

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This paper presents microstructures of Inconel 718 fabricated by electron beam melting (EBM), a powder bed fusion (PBF), additive manufacturing (AM) process, under various conditions with an extended range of electron beam power (P) and scanning speed (V). An adaptive offset method (AOM) was used to optimize the beam scanning line offset adaptively to fabricate blocks without macroscopic defects. In the AOM, the line offset is changed depending on the geometry of melt-pools of adjacent scanning lines. The AOM is valid as long as melt pool depth is larger than layer thickness, and it greatly broadens the process window for building dense and even parts. The broadened process window extends the range of the solidification condition and the variation of the resultant microstructures. Fully columnar grains and mixtures of columnar and equiaxed grains were formed. Mixtures of columnar grains and equiaxed grains were formed under two different types of extreme conditions. The first type is with low line energy/small line offset, which causes equiaxed grains associated with a small number of defects. The second type is with high line energy/large line offset, which causes equiaxed grains via the columnar-to-equiaxed transition (CET). The fully columnar grains are preferably oriented to < 001 > direction in the build direction. The blocks with the different microstructure exhibited similar strengths but different elongations. A processing map was established by plotting the points indicating the build condition and resultant microstructure in the P-V space as a guide for controlling microstructure.
机译:本文介绍了通过电子束熔化(EBM),粉末床熔化(PBF),增材制造(AM)工艺,在各种条件下扩展电子束功率(P)和扫描速度(V)制成的Inconel 718的微观结构)。自适应偏移方法(AOM)用于优化光束扫描线的偏移,以自适应地制造没有宏观缺陷的模块。在AOM中,线偏移根据相邻扫描线的熔池的几何形状而改变。只要熔池深度大于层厚,AOM就有效,并且它大大拓宽了用于制造致密且均匀零件的工艺窗口。加宽的工艺窗口扩展了凝固条件的范围和所得微结构的变化。形成了完全柱状晶粒以及柱状和等轴晶粒的混合物。柱状晶粒和等轴晶粒的混合是在两种不同的极端条件下形成的。第一种是线能量低/线偏移小,这会导致等轴晶粒与少量缺陷相关。第二种类型具有较高的线能量/较大的线偏移量,这会通过柱状到等轴过渡(CET)导致等轴晶粒。全柱状晶粒优选在构造方向上取向为<001>方向。具有不同微观结构的块体表现出相似的强度,但伸长率却不同。通过在P-V空间中绘制指示构建条件和所得微结构的点作为控制微结构的指导,可以建立加工图。

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