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PREPARATION OF CdCr_2S_4 AND HgCr_2S_4 THIN FILMS BY CHEMICAL BATH DEPOSITION

机译:化学浴沉积法制备CdCr_2S_4和HgCr_2S_4薄膜

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CdCr_2S_4 and HgCr_2S_4 thin films were deposited onto glass substrates by the simple chemical bath deposition method from aqueous alkaline and acidic baths, respectively. The films were unifOrm and adherent to glass substrates. They were characterized by structural, optical, and electrical measurement techniques. According to their X-ray diffraction pattems, CdCr_2S_4 films are polycrystalline with an estimated bandgap energy E-g of 2.6 eV, while HgCr_2S_4 films are amorphous with a bandgap energy equal to 2.7 eV. Scanning electron micrographs showed that the substrates were well covered with films; no cracks or pinholes were observed. Electrical resistivity of the as-deposited CdCr_2S_4 and HgCr_2S_4 films was found to be l.44 X l0~5 and 2.39 X l0~s fl-cm at 350 K, respectively. According to thermoelectric power measurements CdCr_2S_4 and HgCr_2S_4 are of n-type nature.
机译:CdCr_2S_4和HgCr_2S_4薄膜分别通过简单的化学浴沉积方法从碱性水溶液和酸性浴中沉积到玻璃基板上。薄膜是统一的,并粘附在玻璃基板上。它们的特征在于结构,光学和电气测量技术。根据其X射线衍射图谱,CdCr_2S_4薄膜是多晶的,带隙能量E-g估计为2.6 eV,而HgCr_2S_4薄膜是非晶态的,带隙能量等于2.7 eV。扫描电子显微镜照片显示,基材被薄膜很好地覆盖。没有观察到裂纹或针孔。在350 K下,沉积的CdCr_2S_4和HgCr_2S_4薄膜的电阻率分别为1.44 X 10〜5和2.39 X 10〜s fl-cm。根据热电功率测量,CdCr_2S_4和HgCr_2S_4具有n型性质。

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