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FLUX GROWTH OF KTiOPO_4 SINGLE CRYSTALS DOPED WITH Me~4+ IONS

机译:掺有Me〜4 +离子的KTiOPO_4单晶的通量生长

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In the present work, potassium titanyl phosphate single crystals doped with different levels of Ge~4+, Zr~4+, and Ce~4+ were successfully grown by flux using the top-seeded solution growth (TSSG) method. Their saturation tem- peratures and crystal habits were compared with those of the undoped single crystals and some differences were observed. In addition, the distribution coefficients of the different dopants were also determined and found to be in correlation with the ionic radii of the M~4+ ions. Zr~4+ doping gives the most suitable distribution coefficient, does not introduce problematic absorption bands in the visible region, and significantly reduces the ionic conductivity in the c direction.
机译:在目前的工作中,使用顶晶溶液生长(TSSG)方法通过助熔剂成功地生长了掺杂有不同含量的Ge〜4 +,Zr〜4 +和Ce〜4 +的磷酸氧钛钾单晶。将它们的饱和温度和晶体习惯与未掺杂的单晶进行比较,并观察到一些差异。此外,还确定了不同掺杂物的分布系数,发现它们与M〜4 +离子的离子半径相关。 Zr〜4 +掺杂可提供最合适的分布系数,不会在可见光区域引入有问题的吸收带,并显着降低c方向的离子电导率。

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