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A COMPARATIVE STUDY OF THE PROPERTIES OF SPRAY-DEPOSITED Sb_2Se_3 THIN FILMS PREPARED FROM AQUEOUS AND NONAQUEOUS MEDIA

机译:水性和非水性介质制备的喷镀沉积Sb_2Se_3薄膜的性能比较研究

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Semiconducting antimony triselenide thin films were obtained by spray- depositing aqueous and nonaqueous media, at optimized substrate temperature and solution concentration, onto optically fiat glass substrates. Film thickness was of the order of 0.5 um. X-ray diffraction studies revealed that the as-deposited films prepared from the aqueous medium were polycrystalline, while those prepared from the nonaqueous medium were amorphous. The optical gap of the Sb_2Se_3 thin films prepared from the aqueous medium was l.88 eV, due to direct interband transition. In contrast, the optical gap for the films prepared from the nonaqueous medium was l.73 eV. Room-temperature electrical resistivity for the films prepared from both media was found to be of approximately the same order, l0~7 Ω -cm. Thermoelectric power (TEP) measurement studies revealed that the films prepared from both media showed p-type conductivity, with Seebeck coefficients of 46.2 and l8.3 uV/deg.C for the polycrystalline and amorphous Sb_2Se_3 thin films, respectively.
机译:通过在最佳基板温度和溶液浓度下将水性和非水性介质喷涂在光学平整的玻璃基板上,可以获得三硒化锑半导体薄膜。膜厚度为0.5μm的量级。 X射线衍射研究表明,由水性介质制备的沉积薄膜是多晶的,而由非水性介质制备的薄膜是非晶的。由于直接的带间跃迁,由水性介质制备的Sb_2Se_3薄膜的光学间隙为1.88eV。相反,由非水介质制备的膜的光学间隙为1.73eV。发现由两种介质制备的薄膜的室温电阻率大致相同,为10至7Ω-cm。热电功率(TEP)测量研究表明,由两种介质制备的薄膜均表现出p型导电性,多晶和非晶Sb_2Se_3薄膜的塞贝克系数分别为46.2和18.3。uV /℃。

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