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机译:在c面蓝宝石上的GaN膜中,将c取向的纳米壁网络转变为平坦的形态
International Centre for Material Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India;
International Centre for Material Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India;
Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA;
International Centre for Material Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India;
a. nitride; a. nanostructures; b. epitaxial growth; c. x-ray diffraction;
机译:成核层的形貌和外延层结构对MOCVD在c面蓝宝石上生长的GaN薄膜电阻率的影响
机译:位错导致在裸露的C面蓝宝石上自发形成gan纳米壁和纳米柱的证据
机译:外延生长和约300nm厚的AllnN薄膜的表征与蓝宝石上生长的c面GaN晶格匹配
机译:控制在c面蓝宝石上沉积的GaN膜的极性和表面形态
机译:使用同步加速器X射线通过晶体截断杆分析研究C面蓝宝石上的铜薄膜的界面结构。
机译:在c面蓝宝石上生长具有高温AlN缓冲液的氮极(000 ... ... ...)GaN
机译:生长在垂直c形棱镜形状的InN纳米壁网络 通过化学气相沉积技术的c-GaN /蓝宝石模板