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Electrochemical and microstructural characterization of magnetron-sputtered ATO thin films as Li-ion storage materials

机译:磁控溅射ATO薄膜作为锂离子存储材料的电化学和微观结构表征

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摘要

Sb-doped SnO_2 (ATO) nanostructured thin films were prepared by using radio frequency magnetron sputtering at the substrate temperatures of 25 ℃, 100 ℃ and 200 ℃, respectively. All the ATO thin films have the similar redox characteristics in the cyclic voltammetry measurements. The ATO thin film sputtered at 200 ℃ shows the lowest charge transfer resistance and best electrochemical performance, and has a high reversible capacity of 679 mA h g~(-1) at 100mA g~(-1) after 200 charge-discharge cycles and high rate performance of 483 mAh g~(-1) at 800mA g~(-1). The electrochemical mechanisms were investigated by analyzing the phase evolution of the ATO electrodes that had been electrochemically induced at various stages. The results reveal that the ATO underwent reversible lithiation/delithiation processes during the electrochemical cycles, i.e., the SnO_2 reacted with Li~+ to produce metallic Sn and followed by the formation of the Li_xSn alloys during discharge process, and then Li_xSn alloys de-alloyed, Sn reacted with Li_2O, and even partially formed SnO_2 during charge process.
机译:采用射频磁控溅射分别在衬底温度为25℃,100℃和200℃的条件下制备了掺Sb的SnO_2(ATO)纳米结构薄膜。在循环伏安法测量中,所有的ATO薄膜都具有相似的氧化还原特性。在200℃溅射的ATO薄膜表现出最低的电荷转移电阻和最佳的电化学性能,经过200次充放电循环,在100mA g〜(-1)下具有679 mA hg〜(-1)的高可逆容量。 800mA g〜(-1)时的483 mAh g〜(-1)速率性能。通过分析在各个阶段以电化学方式诱导的ATO电极的相变,研究了电化学机理。结果表明,ATO在电化学循环过程中经历了可逆的锂化/脱锂过程,即SnO_2与Li〜+反应生成金属锡,随后在放电过程中形成Li_xSn合金,然后将Li_xSn合金脱合金。在充电过程中,Sn与Li_2O反应,甚至部分形成SnO_2。

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  • 来源
    《Materials Research Bulletin》 |2015年第1期|9-15|共7页
  • 作者单位

    School of Materials Science and Engineering, Central South University, Changsha 410083, PR China;

    School of Materials Science and Engineering, Central South University, Changsha 410083, PR China;

    School of Materials Science and Engineering, Central South University, Changsha 410083, PR China;

    School of Materials Science and Engineering, Central South University, Changsha 410083, PR China;

    School of Materials Science and Engineering, Central South University, Changsha 410083, PR China;

    School of Materials Science and Engineering, Central South University, Changsha 410083, PR China,State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, PR China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ATO thin film; Magnetron sputtering; Electrochemical performance; Phase evolution; Electrochemical mechanism;

    机译:ATO薄膜;磁控溅射;电化学性能;相位演化;电化学机理;

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