Cleaving oxide films using hydrogen implantation

摘要

Precise cleaving of oxide films with Known thickness using hydrogen implantation and subsequent annealing was investigated using strontium titanate (SrTiO_3) as a model material. Rutherford backscattering in channeling geometry (RBS/C), nuclear reaction analysis (NRA), and scanning electron microscopy (SEM) have been used to characterize this process.