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Purification of cadmium by vacuum distillation and its analysis

机译:真空蒸馏纯化镉及其分析

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High purity (99.9999 percent or 6N) cadmium (Cd) was obtained through multiple vacuum distillation using 99.98 percent (3N8) pure Cd as input material and condensing the vapours of the distillate on a high-density graphite collector. The soaking temperature and the time were optimized to achieve the desired purity and distillation rate/yield at a dynamic vacuum level of approx 2.1 X 10~(3-) Torr. The detailed analysis of input as well as purified Cd was carried out by inductively coupled plasma optical emission spectrometry (ICP-OES) for 29 major impurity elements. The analysis confirmed the reduction of total impurity content from approx 190 to approx 1.8 ppm (approx 6N) upon three consecutive vacuum distillations. The present studies showed that the major impurities separated from the distilled cadmium are Zn, Cu, Ag, Sb, Pb, Bi, Fe, Ni, TI, etc. It was observed that these impurities require adaptation of elemental analyzing technique to counter dilution effect.
机译:通过多次真空蒸馏,使用99.98%(3N8)的纯Cd作为输入材料,并在高密度石墨收集器上冷凝馏出物的蒸汽,可以得到高纯度(99.9999%或6N)的镉(Cd)。优化了均热温度和时间,以在约2.1 X 10〜(3-)Torr的动态真空水平下获得所需的纯度和蒸馏速率/产率。通过电感耦合等离子体发射光谱法(ICP-OES)对29种主要杂质元素进行了输入和纯化Cd的详细分析。分析证实,在连续三个真空蒸馏后,总杂质含量从约190降低到约1.8 ppm(约6N)。目前的研究表明,从蒸馏镉中分离出的主要杂质为Zn,Cu,Ag,Sb,Pb,Bi,Fe,Ni,TI等。已观察到这些杂质需要采用元素分析技术来应对稀释效应。 。

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