Formation of silicon-on-aluminum nitride using ion-cut and theoretical investigation of self-heating effects

摘要

We propose to replace the buried SiO_2 layer in silicon-on-insulator (SOI) with a plasma-synthesized A1N thin film to mitigate the self-heating penalty. The A1N films synthesized on Si by metal plasma immersion ion implantation-deposition (Me-PIIID) exhibit outstanding surface topography and excellent insulating characteristics. Using direct bonding process and the hydrogen-induced layer transfer method, a silicon-on-AIN (SOAN) structure has been successfully fabricated. Cross-sectional high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) depth profiles and spreading resistance probe (SRP) reveal that a uniform buried A1N layer is under a single crystal Si overlayer. The interfaces between the top Si layer, buried A1N layer, and Si substrate are smooth and sharp. In addition, the new SOAN device has been verified in two-dimensional device simulation and demonstrates that the self-heating penalty of SOI can indeed be reduced using SOAN substrates.