首页> 外文期刊>Materials Letters >Synthesis of doped ZnS one-dimensional nanostructures via chemical vapor deposition
【24h】

Synthesis of doped ZnS one-dimensional nanostructures via chemical vapor deposition

机译:化学气相沉积法合成掺杂的ZnS一维纳米结构

获取原文
获取原文并翻译 | 示例
       

摘要

ZnS one-dimensional (ID) nanostructures doped with Mn or Cd have been rapidly synthesized in large scale via a chemical vapor deposition process. Using Zn and S as precursors and MnCl_2 or Cd as doping source, the doped ZnS ID nanostructures were obtained. X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM) were employed to characterize the as-synthesized ZnS nanostructures. The catalytically grown ZnS 1 D nanostructures, including nanowires and nanoribbons, are tens of micrometers in length. All the products are wurtzite ZnS in structure and preferentially grow along the [001] direction. The room temperature photoluminescence properties of these doped ZnS nanostructures are presented.
机译:掺杂有Mn或Cd的ZnS一维(ID)纳米结构已通过化学气相沉积工艺快速大规模地合成。以Zn和S为前驱体,以MnCl_2或Cd为掺杂源,得到了掺杂的ZnS ID纳米结构。利用X射线衍射(XRD),场发射扫描电子显微镜(FE-SEM)和透射电子显微镜(TEM)表征了合成后的ZnS纳米结构。催化生长的ZnS 1 D纳米结构(包括纳米线和纳米带)的长度为数十微米。所有产品的结构均为纤锌矿型ZnS,优先沿[001]方向生长。介绍了这些掺杂的ZnS纳米结构的室温光致发光特性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号