The impact of implantation dose on the characteristics of diluted-magnetic nonpolar GaN:Cu films

摘要

Diluted-magnetic nonpolar GaN:Cu films have been fabricated by implanting Cu ions into p-type nonpolar a-plane(1120) GaN films with a subsequent thermal annealing process. The impact of the implantation dose on the structural, morphological and magnetic characteristics of the samples have been investigated by means of high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and superconducting quantum interference device (SQUID). The XRD and AFM analyses show that the structural and morphological characteristics of samples deteriorated with the increase of implantation dose. According to the SQUID analysis, obvious room-temperature ferromagnetic properties of samples were detected. Moreover, the saturation magnetization per Cu atom decreased as the implantation dose increased.