Effect Of Cuo Addition To Nd(zn_(1/2)ti_(1/2))o_3 Ceramics On Sintering Behavior And Microwave Dielectric Properties

摘要

The microwave dielectric properties and microstructures of CuO-doped Nd(Zn_(1/2)Ti_(1/2))O_3 ceramics prepared by the conventional solid-state route were investigated. The prepared Nd(Zn_(1/2)Ti_(1/2))O_3 exhibits a mixture of Zn and Ti showing 1:1 order in the B-site. As an appropriate sintering aid, not only did CuO lower the sintering temperature, it could effectively hold back the evaporation of Zn in the Nd(Zn_(1/2)Ti_(1/2))O_3. Moreover, CuO only resided in boundaries, which was confirmed by EDX analysis. The measured lattice parameters of CuO-doped Nd (Zn_(1/2)Ti_(1/2))O_3 (a=5.4652±0.0005 A, b=5.6399+0.0007 A, c=7.7797±0.0008 A and β=90.01 +0.01°) retained identical to that of the pure Nd (Zn_(1/2)Ti_(1/2))O_3 in all cases. In comparison with the pure (Zn_(1/2)Ti_(1/2))O_3 ceramics, specimen with 1 wt.% CuO addition possesses a compatible combination of dielectric properties with a ε_r of 30.68, a Q×f of 158,000 GHz (at 8 GHz) and a τ_f of -45 pprn/℃ at 1270℃. It also indicated a 60℃ lowering in the sintering temperature. The proposed dielectrics can be a very promising candidate material for microwave or millimeter wave applications requiring extremely low dielectric loss.