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Synthesis and characterization of SnS nanosheets through simple chemical route

机译:通过简单的化学路线合成和表征SnS纳米片

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摘要

Tin Sulfide (SnS) nanosheets were synthesized by wet chemical route using ethylene glycol (EG) and without using any surfactant. Structural and phase purity were confirmed by powder X-ray diffraction pattern which shows the orthorhombic structure of SnS. The sheets like morphology and particle size of the synthesized product were identified by using analytical transmission electron microscope (TEM) and high resolution transmission electron microscope (HRTEM). Agglomeration of SnS nanoparticles was found to lead to the formation of nanosheets. UV-V1S-NIR absorption spectrum of SnS nanosheets shows the direct transition at 1.88 eV. Compared to bulk band gap a blue shift of 0.58 eV has been observed for direct transition. This is due to the quantum confinement effect. Room temperature photoluminescence spectrum of SnS nanosheets shows two emission bands at 1.75 and 1.57 eV respectively which are assigned to band gap and defect level transitions.
机译:硫化锡(SnS)纳米片是通过湿化学路线使用乙二醇(EG)合成而无需使用任何表面活性剂合成的。通过粉末X射线衍射图证实了结构和相的纯度,该粉末X射线衍射图显示了SnS的正交结构。用分析型透射电子显微镜(TEM)和高分辨率透射电子显微镜(HRTEM)鉴定合成产物的形貌和粒度。发现SnS纳米颗粒的团聚导致纳米片的形成。 SnS纳米片的UV-V1S-NIR吸收光谱显示在1.88 eV处有直接跃迁。与体带隙相比,直接跃迁的蓝移为0.58 eV。这是由于量子限制效应。 SnS纳米片的室温光致发光光谱显示,分别在1.75和1.57 eV处有两个发射带,分别对应于带隙和缺陷能级跃迁。

著录项

  • 来源
    《Materials Letters》 |2011年第8期|p.1148-1150|共3页
  • 作者单位

    Centre for Material Science and Nano Devices, Department of Physics, SRM University, Kattankulathur -603 203, Chennai, India;

    Condensed Matter Physics Division, Indira Candhi Centre for Atomic Research, Kalpakkam, 603102, India;

    Centre for Material Science and Nano Devices, Department of Physics, SRM University, Kattankulathur -603 203, Chennai, India;

    Condensed Matter Physics Division, Indira Candhi Centre for Atomic Research, Kalpakkam, 603102, India;

    Physical Metallurgy Division, Indira Candhi Centre for Atomic Research, Kalpakkam, 603102, India;

    Physical Metallurgy Division, Indira Candhi Centre for Atomic Research, Kalpakkam, 603102, India;

    Post Irradiation Examination Division, Indira Candhi Centre for Atomic Research, Kalpakkam, 603102, India;

    Post Irradiation Examination Division, Indira Candhi Centre for Atomic Research, Kalpakkam, 603102, India;

    Condensed Matter Physics Division, Indira Candhi Centre for Atomic Research, Kalpakkam, 603102, India;

    Physical Metallurgy Division, Indira Candhi Centre for Atomic Research, Kalpakkam, 603102, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    semiconductors; nanocrystalline materials; luminescence;

    机译:半导体;纳米晶体材料;发光的;
  • 入库时间 2022-08-17 13:19:25

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