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Atomic force microscopy study of Mo (110) surface topology after high temperature homoepitaxy

机译:Mo(110)表面拓扑高温高温后的原子力显微镜研究

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In this paper we report experimental results on investigation of Mo (110) single crystals surface topology carried out using AFM technique after high-temperature homoepitaxy within the frame of deposition rates 1-40 ML/s and in the interval of substrate temperatures 1900 ℃-2300 ℃. The systems of atomically flat steps on the surface of single crystal samples were observed. Typical height of the steps was in the range 1 -4 of (110) parallel lattice plane spacing, with width being about 50-70 nm. High temperature homoepitaxy of Mo leads to formation of micro-crystals with dimensions up to 150μ in width and few micrometres in height. Huge monatomic steps up to 5-10 μ in width were observed on flat (110) Mo micro-crystal planes slightly declined to the substrate surface. The root-mean-square (RMS) roughness of the micro-crystal surfaces achieves the values of 0.2 nm which is determined by the presence of monoatomic steps. The residual pattern of spiral growth was also observed on the top of (110) micro-crystal surfaces.
机译:在本文中,我们报告了在沉积速率1-40 ML / s以及衬底温度1900℃-时间间隔内进行高温同质外延后,采用AFM技术对Mo(110)单晶表面拓扑进行研究的实验结果。 2300℃。观察到单晶样品表面上原子平坦台阶的系统。台阶的典型高度在(110)平行晶格平面间距的1-4的范围内,宽度为约50-70nm。 Mo的高温同质外延导致形成微晶,微晶的宽度最大为150μ,高度仅为几微米。在平坦(110)的Mo微晶平面上略微下降到基板表面,观察到高达5-10μ的巨大单原子台阶。微晶表面的均方根(RMS)粗糙度达到0.2 nm的值,该值由单原子台阶的存在确定。在(110)微晶表面的顶部还观察到了螺旋状生长的残留图案。

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