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A combined top-down and bottom-up approach to fabricate silica films with bimodal porosity

机译:自上而下和自下而上的组合方法来制造具有双峰孔隙率的二氧化硅膜

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摘要

We report a method to fabricate silica films with bimodal porosity based on the surfactant-directed self-assembly process followed by post-treatment with reactive ion etching (RIE). By RIE of a surfactant-templated mesoporous silica film with a 3D hexagonal structure, vertically-etched pores with the size of several tens of nanometers and the depth of ca. 60 nm are generated, while the original caged mesopores (ca. 5 nm in size) are still retained in the unetched parts of the film. Pre-treatment of the mesoporous silica film by wet-etching to expose the pores on the surface, followed by sputter deposition of a Pt layer for partial masking, is crucial for the anisotropic etching of the film. Such a combined top-down and bottom up approach offers an opportunity to fabricate silica films with hierarchical pore architectures.
机译:我们报道了一种基于表面活性剂定向的自组装过程,然后用反应离子刻蚀(RIE)进行后处理的,具有双峰孔隙率的二氧化硅膜制造方法。通过RIE的具有3D六边形结构的表面活性剂模板的介孔二氧化硅膜,垂直蚀刻的孔的大小为几十纳米,深度为约200nm。产生了60 nm,而原始的笼状中孔(尺寸约为5 nm)仍保留在膜的未蚀刻部分中。通过湿法蚀刻对中孔二氧化硅膜进行预处理以暴露表面上的孔,然后溅射沉积Pt层以进行部分掩膜,对于膜的各向异性蚀刻至关重要。这样的自上而下和自下而上的组合方法为制造具有分层孔结构的二氧化硅膜提供了机会。

著录项

  • 来源
    《Materials Letters》 |2011年第5期|p.828-831|共4页
  • 作者单位

    Department of Chemical System Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;

    Department of Chemical System Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;

    Department of Chemical System Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;

    Institute of Engineering Innovation, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan;

    Department of Chemical System Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Mesoporous silica; Bimodal porosity; Reactive ion etching;

    机译:中孔二氧化硅;双峰孔隙;反应离子刻蚀;

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