Application of in situ chloride-generated route to Ti_5Si_3 nanowires from and on Si substrate

摘要

Most titanium silicide one-dimensional (1D) nanostructures have been thus far prepared by using titanium chloride as precursor which is very sensitive to air and very inconvenient to the experimental operations. Herein Ti_5Si_3 nanowires were synthesized on bare Si substrate via in situ chloride-generated route, and the shortcomings from the direct use of titanium chloride were well avoided. Furthermore, the Si substrate functions as both Si source and substrate; thus, the synthesis and potential integration of titanium silicide nanostructures on a mature silicon substrate is accomplished by one step. In this way the as-synthesized Ti_5Si_3 nanowires on Si substrate showed promising field-emission behavior.