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Retardation of (Cu,Ni)_6Sn_5 spalling in Sn-Ag-Cu/Ni solder joints via controlling the grain structure of Ni metallization layer

机译:通过控制Ni金属化层的晶粒结构来缓和Sn-Ag-Cu / Ni焊点中(Cu,Ni)_6Sn_5的剥落

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摘要

In the Sn-3.0Ag-0.5 Cu/Ni (wt%; SAC305/Ni) solder joint, the (Cu,Ni)_6Sn_5 spalling was suppressed by altering the microstructure of Ni films. Ni films with intertwined and straight grain boundaries (GBs) were fabricated by the diverse target powers of the direct current magnetron sputter. The intertwined GB and the straight GB of Ni films determined the degree of the (Cu,Ni)_6Sn_5 spalling. Ni films with straight GB accelerated the (Cu,Ni)_6Sn_5 spalling due to the fast diffusion path of Ni and Cu in straight GB of Ni films. In contrast, the winding grain structure of Ni film, called intertwined GB-Ni film, can suppress the interdiffusion of Cu and Ni. Thus, the (Cu,Ni)_6Sn_5 spalling was successfully retarded by the Ni structure with intertwined GB.
机译:在Sn-3.0Ag-0.5 Cu / Ni(wt%; SAC305 / Ni)焊点中,(Cu,Ni)_6Sn_5剥落通过改变Ni膜的微观结构而得到抑制。通过直流磁控溅射的不同靶功率制作了具有交织的晶界和直的晶界(Ni)的Ni膜。 Ni膜的交织GB和直GB决定了(Cu,Ni)_6Sn_5剥落的程度。由于Ni和Cu在Ni直GB中的快速扩散路径,具有GB直的Ni薄膜加速了(Cu,Ni)_6Sn_5剥落。相反,被称为缠结的GB-Ni膜的Ni膜的缠绕晶粒结构可以抑制Cu和Ni的相互扩散。因此,GB相互缠绕的Ni结构成功地抑制了(Cu,Ni)_6Sn_5的剥落。

著录项

  • 来源
    《Materials Letters》 |2013年第15期|40-42|共3页
  • 作者单位

    Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013 Taiwan;

    Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013 Taiwan;

    Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013 Taiwan;

    Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013 Taiwan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Electronic materials; Intermetallic alloys and compounds; Phase transformation; Microstructure;

    机译:电子材料;金属间合金和化合物;相变;微观结构;
  • 入库时间 2022-08-17 13:19:00

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