Resistive switching characteristics of ferroelectric BiFeO_3 nanodot prepared by dip-pen nanolithography

摘要

We report the ferroelectric response and resistive switching characteristics of a BiFeO_3 nanodot on a Nb-doped SrTiO_3 substrate, prepared by elaborately controllable dip-pen nanolithography (DPN) process. By performing piezoresponse force microscopy (PFM) measurements, it is confirmed that the BiFeO_3 nanodot exhibited good ferroelectric response and switching properties. More interestingly, based on current-voltage characterizations using a conducting atomic force microscope (CAFM) technique, we observed unipolar resistive switching behavior in the BiFeO_3 nanodots. In addition, the bistable resistive switching characteristics were found to be reproducible with increasing the switching cycle up to 200 cycles, suggesting the future applicability for next generation RRAM memory devices.