机译:(010)β-LiGaO_2衬底上的三角形GaN纳米岛的外延
NSC Taiwan Consortium of Emergent Crystalline Materials, Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan;
NSC Taiwan Consortium of Emergent Crystalline Materials, Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan;
NSC Taiwan Consortium of Emergent Crystalline Materials, Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan;
NSC Taiwan Consortium of Emergent Crystalline Materials, Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan;
Nanoparticles; Epitaxial growth; Chemical vapor deposition; Microstructure;
机译:通过化学气相沉积在(010)LiGaO_2衬底上生长和表征a平面(1120)GaN膜
机译:GaN外延过程中LiGaO_2衬底的表面改性和反应性
机译:用于GaN外延的LiGaO_2衬底晶体的生长和表征
机译:SiC,ZnO和LiGaO_2衬底上MBE生长的GaN膜的比较分析
机译:用于未来III-氮化物生长的氢化物气相外延生长GaN衬底的表征
机译:通过分子束外延在Si(111)衬底上生长GaN纳米壁网络
机译:3D三角GAN纳诺岛的自组织与六角形的形状变化