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Polycrystalline Sr_2FeMoO_6 thin films on Si substrate by pulsed laser deposition for magnetoresistive applications

机译:脉冲激光沉积在Si衬底上的多晶Sr_2FeMoO_6薄膜用于磁阻应用

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摘要

Polycrystalline Sr_2FeMoCO_6 (SFMO) thin films were deposited at different substrate temperatures (500-800 C) on STO buffered Si (100) substrates by pulsed laser deposition (PLD). Structural analysis shows the single phase formation of polycrystalline SFMO thin films. A large (~ 12%) high field magnetoresistance (HFMR) was observed at 5 K in polycrystalline films deposited at 800 C First time, we studied the MR effect in polycrystalline SFMO thin films grown on Si substrate, which make them very promising for magnetoresistive and spintronic applications and possibly open the future prospect for their possible integration in microelectronic industries.
机译:通过脉冲激光沉积(PLD)在STO缓冲的Si(100)衬底上以不同的衬底温度(500-800 C)沉积多晶Sr_2FeMoCO_6(SFMO)薄膜。结构分析显示了多晶SFMO薄膜的单相形成。在800 K下沉积的多晶薄膜中,在5 K下观察到大(〜12%)的高场磁阻(HFMR)。首次,我们研究了在Si衬底上生长的多晶SFMO薄膜的MR效应,这使其对于磁致电阻非常有希望。和自旋电子技术的应用,并可能为它们在微电子行业中的整合打开未来的前景。

著录项

  • 来源
    《Materials Letters》 |2014年第1期|200-203|共4页
  • 作者单位

    National Physical Laboratory, K.S. Krishnan Marg, New Delhi 110012, India,Department of Physics, National Institute of Technology, Kurukshetra 136119, India,Department of Physics, University of Puerto Rico, San Juan, PR 00931, USA;

    Department of Physics, University of Puerto Rico, San Juan, PR 00931, USA;

    National Physical Laboratory, K.S. Krishnan Marg, New Delhi 110012, India;

    Department of Physics, National Institute of Technology, Kurukshetra 136119, India;

    UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore 452001, India;

    UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore 452001, India;

    Department of Physics, University of Puerto Rico, San Juan, PR 00931, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Thin films; Physical vapor deposition; X-ray techniques;

    机译:薄膜;物理气相沉积;X射线技术;

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