Quaternary Cu2NiSnS4 thin films as a solar material prepared through electrodeposition

摘要

Quaternary chalcopyrite compounds (Cu2XSnS4, X=Zn, Fe, Co, Ni) are promising candidate materials for thin-film solar cells because of their abundance and nontoxic compositions. Here, 1.2-mu m-thick Cu2NiSnS4 (CNTS) thin films were successfully fabricated through electrodeposition. The structural, morphological, and optical properties of the CNTS thin films were characterized through high-resolution X-ray diffraction, field emission scanning electron microscopy, and ultraviolet-visible-near-infrared spectrophotometry. The bonding properties of CNTS was measured through Raman scattering, which revealed two principal Raman peaks of Al mode at approximately 280 and 350 cm(-1). The morphology of CNTS was uniform with an average grain size of 1 +/- 0.2 mu m. The valences of the thin-film constituents were Cu+1, Ni+2, Sn+4, and S-2. The optical band gap of CNTS was approximately 1.2 eV, which is suitable for thin-film photovoltaic applications. (C) 2015 Elsevier B.V. All rights reserved.