机译:孔隙率引起的压电层中压电层中压电响应的减弱
Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China;
Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China;
Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China;
Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China;
Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China;
Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China;
Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China;
Porous materials; GaN; Piezoelectric materials; Porosity; UV-assisted electrochemical etching;
机译:压电响应力显微镜确定用于MEMS的薄AlN层的压电特性
机译:压电响应力显微镜研究含Cu缓冲层的c-BN薄膜的微观结构和纳米级压电性能
机译:接触模式压电响应力显微镜下的压电介质中的内在压电响应
机译:横向各向同性压电薄膜的渐近有效压电系数解
机译:压电响应力显微镜使用自适应接触模式成像
机译:相反压电在非压电材料中产生大的压电响应力显微镜信号
机译:压电响应力显微镜对细胞膜双层磷脂分子的压电效应进行纳米成像*