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首页> 外文期刊>Materials Letters >Synthesis of Cu2MnSnS4 thin film deposited on seeded fluorine doped tin oxide substrate via a green and low-cost electrodeposition method
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Synthesis of Cu2MnSnS4 thin film deposited on seeded fluorine doped tin oxide substrate via a green and low-cost electrodeposition method

机译:通过绿色低成本电沉积方法在籽晶掺杂氟的氧化锡衬底上沉积Cu2MnSnS4薄膜

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摘要

Cu2MnSnS4 (CMTS) thin film was the first time to deposit on the seeded fluorine doped tin oxide (FTO) substrate via sulfurization of electrodeposited Cu-Sn/Mn metal precursors. X-ray diffraction patterns and Raman measurements reveal the formation of stannite structure CMTS film with pure phase. The morphological and chemical composition studies indicate the formation of compact and homogenous CMTS thin film with Cu-poor and Mn-rich composition. The band gap of CMTS thin film is evaluated to be about 1.35 eV by the transmission spectrum. The results offer a novel research direction for preparing pure-sulfide CMTS thin films by using a simple, facile, green and low-cost electrodeposition method. (C) 2016 Elsevier B.V. All rights reserved.
机译:Cu2MnSnS4(CMTS)薄膜是第一次通过电沉积的Cu-Sn / Mn金属前体的硫化而沉积在晶种的掺氟掺杂氧化锡(FTO)衬底上的薄膜。 X射线衍射图谱和拉曼光谱表明形成了纯相的锡矿结构CMTS薄膜。形态和化学组成研究表明形成了致密且均质的,贫铜和富锰的CMTS薄膜。通过透射光谱估计CMTS薄膜的带隙为约1.35eV。研究结果为采用简单,简便,绿色和低成本的电沉积方法制备纯硫化物CMTS薄膜提供了新的研究方向。 (C)2016 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Materials Letters》 |2017年第15期|186-188|共3页
  • 作者单位

    East China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China;

    Shanghai Univ, Lab Microstruct, 99 Shangda Rd, Shanghai 200444, Peoples R China;

    East China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China;

    East China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China;

    East China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China;

    East China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China;

    East China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China;

    East China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Semiconductors; Cu2MnSnS4; Thin films; Fro; Electrodeposition;

    机译:半导体;Cu2MnSnS4;薄膜;Fro;电沉积;

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