High-sensitivity UV photodetector based on oblique and vertical Co-doped ZnO nanorods

摘要

Oblique and the vertical Co-doped ZnO nanorod arrays were successfully synthesized on a flexible polyethylene naphthalate (PEN) substrate using chemical bath deposition method. The metal-semiconductor-metal (MSM) configuration was used to fabricate UV photodetector based on the Co-doped ZnO nanorods grown on a flexible PEN substrate. At 5 V bias voltage, the calculated responsivity of the UV photodetector was 8.76 A/W. Meanwhile, calculated photosensitivity of the UV photodetector was 250 at bias voltage of 5 V. Under 5 V applied bias voltage, the UV photodetector based on Co-doped ZnO nanorods showed fast response time of 0.229 s and recovery time of 0.276 s. (C) 2017 Elsevier B.V. All rights reserved.