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Studies on the electrical properties of Cu_2NiSnS_4 thin films prepared by a simple chemical method

机译:简单化学法制备Cu_2NiSnS_4薄膜的电学性能研究

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In this paper, the Cu2NiSnS4 (CNTS) thin films were synthesized by a simple chemical method using Spray Sandwich technique without any annealing treatment. The prepared CNTS thin films were studied by X-ray diffraction (XRD) and impedance spectroscopy. The result obtained from the XRD measurements showed that CNTS thin films are polycrystalline in nature with cubic structure and preferred orientation along (111) plane. Electrical study of CNTS thin films is investigated by impedance spectroscopy for the first time. The activation energies E-a obtained from both angular frequency and DC conductivity are found to be 1.18 and 1.1 eV, respectively. (C) 2017 Elsevier B.V. All rights reserved.
机译:在本文中,通过简单的化学方法使用喷涂三明治技术合成了Cu2NiSnS4(CNTS)薄膜,没有进行任何退火处理。通过X射线衍射(XRD)和阻抗谱研究了制备的CNTS薄膜。从XRD测量获得的结果表明,CNTS薄膜本质上是多晶的,具有立方结构并且优选沿着(111)面取向。 CNTS薄膜的电学研究首次通过阻抗谱进行了研究。从角频率和直流电导率两者获得的活化能E-a分别为1.18和1.1eV。 (C)2017 Elsevier B.V.保留所有权利。

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