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首页> 外文期刊>Materials Letters >Semi-transparent quantum-dot light-emitting diode with ultrathin Au electrode embedded in solution-processed coatings
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Semi-transparent quantum-dot light-emitting diode with ultrathin Au electrode embedded in solution-processed coatings

机译:溶液加工涂层中嵌入超薄金电极的半透明量子点发光二极管

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In this study, ultrathin Au films embedded between solution-processed layers of ZnMgO and phosphomolybdic acid (PMA) are investigated in the context of transparent conductive electrodes (TCEs) for opto-electronic applications. We report that ZnMgO/Au/PMA multilayer prepared by combined spin-coting/sputtering method might reach transmittance of over 83% and sheet resistance of 16 Omega/sq. Spin-coated coatings are demonstrated to contribute to the anti-reflect effect that improves Au transmittance. Transparent multilayer electrode is finally incorporated into the architecture of quantum-dot light-emitting diode (QD-LED). The complete device is shown to reach a peak transmittance of 75% at 550 nm and a maximum external quantum efficiency of 2%. (C) 2019 Elsevier B.V. All rights reserved.
机译:在这项研究中,在用于光电应用的透明导电电极(TCE)的背景下,研究了嵌入在ZnMgO和磷钼酸(PMA)的溶液处理层之间的超薄Au膜。我们报道,通过旋转纺丝/溅射方法制备的ZnMgO / Au / PMA多层膜可能会达到超过83%的透射率和16 Omega / sq的薄层电阻。旋涂涂层被证明有助于提高金透射率的抗反射效果。透明多层电极最终被并入量子点发光二极管(QD-LED)的体系结构中。完整的器件显示出在550 nm处的峰值透射率为75%,最大外部量子效率为2%。 (C)2019 Elsevier B.V.保留所有权利。

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