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Broadband tunable absorber for terahertz waves based on isotropic silicon metasurfaces

机译:基于各向同性硅超表面的太赫兹波宽带可调吸收器

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摘要

A broadband tunable absorber is studied based on the silicon metasurface at terahertz frequencies. By tuning the conductivity of silicon, absorptance is more than 90% from 0.497 THz to 1.045 THz with central frequency of 0.771 THz when the conductivity is equal to 2500 S/m. Simulated results show that absorptance peak can be modulated from 1% to 100% when the conductivity continuously changes from 0 S/m to 2500 S/m. The central-symmetry structure leads to polarization independence. Our design may be used as optoelectronic modulator, tunable detector, and terahertz switch. (C) 2018 Elsevier B.V. All rights reserved.
机译:基于太赫兹频率的硅超表面研究了宽带可调吸收器。通过调节硅的电导率,当电导率等于2500 S / m时,吸光度从0.497 THz到1.045 THz超过90%,中心频率为0.771 THz。模拟结果表明,当电导率从0 S / m连续变化到2500 S / m时,吸收率峰值可以从1%调整为100%。中心对称结构导致极化独立性。我们的设计可用作光电调制器,可调检测器和太赫兹开关。 (C)2018 Elsevier B.V.保留所有权利。

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