Successive Ionic Layer Absorption and Reaction Deposited SnS and CdZnS for Efficiency Enhancement of MAPbl_3 Solar Cell by Numerical Analysis

摘要

In this paper alternate low cost, easy to fabricate hole transport layer (HTL) and electron transport layer was proposed for efficiency enhancement of lead halide perovskite solar cell (LHPSC). SnS and Zn doped CdS thin film was prepared by successive ionic layer absorption and reaction(SILAR) method at room temperature. X-ray diffraction (XRD) confirms herzenbegrite orthorhombic crystal structure for SnS thin film and hexagonal wurtzite structure of CdS. To validate the concept of efficiency enhancement for experimentally designed SnS thin film as HTL and Zn doped CdS asETL, solar cell capacitance simulation (SCAPS) was used. In SCAPS first result for experimental J–V of LHPSC with power conversion efficiency (PCE) 19.7%, Voc of 1.08 V, Jsc of 23.8 mA/cm2 and FF of 76% were produced. NextSnS was applied as HTL and Zn doped CdS as ETL in SCAPS to analyze the effect. After optimization LHPSC solar cell in SCAPS reached up to a value of PCE 23.62% with Voc of 1.10 V, Jsc 25.53 mA/cm2 and FF 84.32%.