...
首页> 外文期刊>Materials & design >High quality epitaxial fluorine-doped SnO_2 films by ultrasonic spray pyrolysis: Structural and physical property investigation
【24h】

High quality epitaxial fluorine-doped SnO_2 films by ultrasonic spray pyrolysis: Structural and physical property investigation

机译:超声喷雾热解法制备高质量外延掺氟SnO_2薄膜的结构和物理性能研究

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

Despite its wide use in the display and photovoltaic industries, fluorine-doped tin oxide (F:SnO2, FTO) has been studied only in its polycrystalline form. In this work, we report on the first growth of epitaxial FTO thin film by ultrasonic spray pyrolysis - a simple chemical deposition method - and we reveal the structure-property interplay by investigating in details its growth, morphology and strain/defects. Epitaxial FTO films are successfully grown on (110) rutile TiO2 single crystals and form mosaic domains with an out-of-plane distribution smaller than 0.5 degrees, showing high structural quality comparable to epitaxial films prepared by molecular beam epitaxy and pulsed-laser deposition. Owing to the large lattice mismatch with rutile TiO2, the FTO film develops significant structural defects to release the epitaxial strain and is consequently nearly fully relaxed with a slight residual strain of 0.1-0.2%. With the help of an innovative nano-beamprecession electron diffraction technique, the strain distribution is mapped at the TiO2/FTO interface, from which we identify the interfacial and secondary strain relaxation taking place mainly in the first 22 nmin the FTO film. The Hall-mobility of the epitaxial FTO films is close to the state-of-the-art and expected to improve further at lower doping concentrations. (C) 2017 Elsevier Ltd. All rights reserved.
机译:尽管其在显示和光伏行业中得到了广泛使用,但仅以多晶形式研究了掺氟氧化锡(F:SnO2,FTO)。在这项工作中,我们报告了通过超声喷雾热解法(一种简单的化学沉积方法)首次生长外延FTO薄膜,并通过详细研究其生长,形态和应变/缺陷来揭示结构-性能的相互作用。外延FTO薄膜成功地在(110)金红石TiO2单晶上生长,并形成面外分布小于0.5度的镶嵌域,与通过分子束外延和脉冲激光沉积制备的外延薄膜相比,其结构质量高。由于与金红石型TiO2的晶格失配较大,FTO膜出现了明显的结构缺陷以释放外延应变,因此几乎完全松弛,残留应变为0.1-0.2%。借助创新的纳米级凹痕电子衍射技术,将应变分布映射到TiO2 / FTO界面,从中我们可以确定界面和二次应变松弛主要发生在FTO膜的前22 nm中。外延FTO膜的霍尔迁移率接近最新技术,并有望在较低的掺杂浓度下进一步提高。 (C)2017 Elsevier Ltd.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号