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首页> 外文期刊>IEEE Transactions on Components, Packaging, and Manufacturing Technology. Part B, Advanced Packaging >Multilevel thin film packaging: applications and processes for highperformance systems
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Multilevel thin film packaging: applications and processes for highperformance systems

机译:多层薄膜包装:高性能系统的应用和工艺

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IBM has developed and implemented multilayer thin films (MLTF) for both high end and cost-performance systems since the early 1980's. Copper-polymer and aluminum-polymer multilayer thin films have been implemented on silicon, alumina, and glass-ceramic substrates. The various MLTF implementations are: Two layers of Cu-polyimide interconnection on dry pressed alumina for single and dual chip applications, using wet etch of polyimide and subtractive etching of Cr-Cu-Cr for wiring. One to two layers of planar Cu-polyimide interconnection on alumina and glass-ceramic multichip modules for redistribution of chip I/O's to the ceramic vias, using laser ablation for via definition, subtractive etching of Cr-Cu-Cr for wiring definition, and liftoff for bonding pad definition. Four layers of Al-polyimide multichip interconnection on silicon substrates, using reactive ion etching for via definition, subtractive etching of aluminum for wiring definition, and evaporation through a mask for bonding pad definition. Four to five layers of planar Cu-polyimide interconnection on glass-ceramic substrates, using laser ablation for via definition, photosensitive polyimide (PSPI) lithography and blanket electroplating for wiring definition, and liftoff for bonding pad definition. Four or five layers of non-planar Cu-polyimide interconnection on alumina, silicon, and glass-ceramic substrates, using laser ablation or photosensitive polyimide lithography for via definition, additive electroplating or subtractive etching of Cu for wiring definition, and additive electroplating for bonding pad definition. In this paper we discuss the evolution of these thin film technologies as well as the process choices, their merits, and the reasoning behind the various choices
机译:自1980年代初以来,IBM已为高端和具有成本效益的系统开发并实施了多层薄膜(MLTF)。铜聚合物和铝聚合物多层薄膜已在硅,氧化铝和玻璃陶瓷基板上实现。各种MLTF实现方式为:在干压氧化铝上的两层Cu-聚酰亚胺互连,用于单芯片和双芯片应用,使用聚酰亚胺的湿法蚀刻和Cr-Cu-Cr的减性蚀刻进行布线。氧化铝和玻璃陶瓷多芯片模块上的一到两层平面Cu-聚酰亚胺互连,用于将芯片I / O重新分配到陶瓷通孔,使用激光烧蚀定义通孔,减去Cr-Cu-Cr蚀刻以定义布线,以及提起焊盘定义。硅基板上的四层Al-聚酰亚胺多芯片互连,使用反应性离子蚀刻进行通孔定义,铝的减性蚀刻进行布线定义,以及通过掩模进行蒸发以形成焊​​盘。在玻璃陶瓷基板上的四到五层平面Cu-聚酰亚胺互连,使用激光烧蚀来定义通孔,使用光敏聚酰亚胺(PSPI)光刻和毯式电镀来定义布线,并使用剥离来定义焊盘。在氧化铝,硅和玻璃陶瓷基板上使用四层或五层非平面铜-聚酰亚胺互连,使用激光烧蚀或光敏聚酰亚胺光刻技术进行通孔定义,对铜进行附加电镀或减性蚀刻以进行布线定义,并进行附加电镀以进行键合垫定义。在本文中,我们讨论了这些薄膜技术的发展以及工艺选择,优点以及各种选择背后的原因。

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