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首页> 外文期刊>Key Engineering Materials >Synthesis of a Ceramic Alloy Powder in the SiC-AIN System by Direct Reaction between the Constituent Elements
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Synthesis of a Ceramic Alloy Powder in the SiC-AIN System by Direct Reaction between the Constituent Elements

机译:通过组成元素之间的直接反应在SiC-AIN体系中合成陶瓷合金粉末

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摘要

SiC-AIN alloy powders were prepared by reaction sintering of a powder mixture of Si, C, and AI in a nitrogen atmosphere through direct reaction between the constituent elements, i.e. Si + C + xAI + (x/2)N2 = SiC:xAIN. This paper describes the full processing details of the powder preparation and the properties of the synthesized powders and their sintered compacts. Experiments showed that the nitridation of AI occurred actively from 1073 K, followed by the reaction between Si and C at higher temperature. The formation of Si3N4. resulting from the reaction between Si and N, which was not intended in the present process, can be avoided by conducting the reaction sintering in N, gas (contalning 10H2) at 1073 K and subsequently in Ar gas at 1773 K. Such a process produceded SiC-AIN alloys without other phases, and hence fine powders were prepared by ball milling the porous reaction products . Dense compacts of the obtained powders can be fabricated not only by hot-isostatic pressing without external additives but also by pressureless sintering with Y2O3 as sintering additives at relatively low temporattire (2123 K). The microhardness, fracture strength, and fracture toughness of the HIP-sintered SiC-AlN alloys were investigated.
机译:SiC-AIN合金粉​​末是通过在氮气氛中通过构成元素即Si + C + xAI +(x / 2)N2 = SiC:xAIN的直接反应对Si,C和AI的粉末混合物进行反应烧结而制备的。本文介绍了粉末制备的完整工艺细节,以及合成粉末及其烧结体的性能。实验表明,从1073 K开始AI的氮化作用活跃,随后Si和C在较高温度下发生反应。形成Si3N4。通过在1073 K的N气体(含10H2的气体)中,随后在1773 K的Ar气体中进行反应烧结,可以避免Si和N之间的反应所产生的结果,这在本工艺中是无法实现的。不含其他相的SiC-AIN合金,因此通过对多孔反应产物进行球磨来制备细粉。所得粉末的致密压块不仅可以通过在没有外部添加剂的情况下进行热等静压制,而且可以通过在相对较低的温度(2123 K)下用Y2O3作为烧结添加剂进行无压烧结来制造。研究了HIP烧结SiC-AlN合金的显微硬度,断裂强度和断裂韧性。

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