Growth and Transport Property of Polycrystalline Silicon Fabricated with Intentional Orientation Control on Glass

摘要

Polycrystalline silicon tyoly-Si) films were fabricated on glass by very high frequency plasma- enhanced chemical vapor deposition from gaseous mixture of SiF_4 and H_2 with small amounts of SiH_4 The film orientations were controlled by the selection of the SiF_4/H_2 flow rate ratio. Their transport properties were evaluated either by Hall measurement or free carrier absorption analysis to separate the contributions of crystalline grains and grain boundaries in relation to the orientation and microstructure. In addition, hydrogen plasma treatment was examined to improve the transport property of undoped (400) orientedpoly-Si.