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Iridium Oxide as A Stimulating Neural Electrode Formed By Reactive Magnetron Sputtering

机译:氧化铱作为反应性磁控溅射形成的刺激性神经电极

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摘要

Implantable neural prostheses form hybrid interfaces with biological constructs, and the application of electrical fields can restore functions of patients with neurological damages. The various stoichiometric compositions of iridium oxide were synthesized using reactive magnetron sputtering. The charge injection behavior of iridium oxide deposited with an O_2/Ar ratio of 0.5 was similar to pure Ir. The charge density of iridium oxide increased with increasing O_2/Ar ratio, and increasing thickness of iridium oxide.
机译:植入式神经假体与生物结构形成混合界面,电场的应用可以恢复神经功能受损患者的功能。使用反应磁控溅射合成了各种化学计量的铱氧化物。 O_2 / Ar比为0.5的氧化铱的电荷注入行​​为与纯Ir相似。氧化铱的电荷密度随着O_2 / Ar比的增加和氧化铱厚度的增加而增加。

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