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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Development of carbon nanotubes vacuum field emission differential amplifier integrated circuit
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Development of carbon nanotubes vacuum field emission differential amplifier integrated circuit

机译:碳纳米管真空场发射差分放大器集成电路的研制

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摘要

The authors have recently presented a novel concept for the development of vacuum field emission (VFE) differential amplifier (diff-amp) based on a matched pair of carbon nanotube (CNT) triodes and reported the preliminary device characteristics. In this study, they report the development of a CNT VFE diff-amp using CNT emitter arrays with smaller gate aperture, obtaining better device performance after postsynthesis rapid thermal annealing treatment. A pair of well-matched 2 μm circular triode arrays showed a gate turn-on voltage of ~40 V and displayed similar triode characteristics in the saturation region. Moreover, the proposed two-step analytical model shows that the common-mode rejection ratio (CMRR) in decibels has a linear relationship with the applied gate voltage for the improved dual-triode diff-amp. In addition, the diff-amp demonstrates high CMRR (34-58 dB) over a wide operating region.
机译:作者最近提出了一种基于匹配的碳纳米管(CNT)三极管对开发真空场发射(VFE)差分放大器(diff-amp)的新颖概念,并报告了其初步的器件特性。在这项研究中,他们报告了使用具有较小栅极孔径的CNT发射器阵列开发CNT VFE差动放大器的情况,在合成后快速进行热退火处理后可获得更好的器件性能。一对匹配良好的2μm圆形三极管阵列显示了约40 V的栅极导通电压,并在饱和区域显示出相似的三极管特性。此外,所提出的两步分析模型表明,以分贝为单位的共模抑制比(CMRR)与改进的双三极管差分放大器所施加的栅极电压具有线性关系。此外,差动放大器在较宽的工作范围内显示出较高的CMRR(34-58 dB)。

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