Piezoresistive effect in the three-dimensional diamondlike carbon nanostructure fabricated by focused-ion-beam chemical vapor deposition

摘要

In this study, the electrical material characteristics of a three-dimensional (3D) diamondlike carbon (DLC) structure fabricated by focused-ion-beam chemical vapor deposition (FIB-CVD) were evaluated to realize functional 3D nano- and micromechanical devices based on the piezoresistive material. However, the DLC cantilever structure fabricated by FIB-CVD did not exhibit piezoresistive properties due to the incorporated gallium (Ga), which was implanted by Ga~+ FIB irradiation. Therefore, a method for the modification of material characteristics was examined to introduce piezoresistive properties in the 3D DLC structure fabricated by FIB-CVD. Long-time annealing (12 h or more) at a low temperature (300 °C) was found to be an effective method to realize a 3D DLC structure with piezoresistive properties. Long-time annealing at low temperatures caused Ga elimination from the DLC without any change in the sp~2l(sp~2+sp~3) ratio. The values of the gauge factor were in the range of 2-34. 3D nano- and microstructures with piezoresistive properties could be realized by FIB-CVD and annealing treatment.