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Development of edge field emission old cathodes based on low work function Cu-Li alloy coatings

机译:基于低功函数Cu-Li合金涂层的边缘场发射旧阴极的研制

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摘要

Vertical edge emitter arrays of thin walled (500-8000 A) hollow cylinders have been fabricated by the deposition of Cu-20 at. /100 Li alloy (Cu_4Li) thin films on arrays of Si posts, followed by selective etching of the Si core. What remains is a hollow cylinder of cu_4Li, where the thickness of the emitting edge is determined by the deposited film thickness. Additionally, lateral edge emitters were fabricated from arrays of holes in SiO_2 or Si_3N_4 films on flat Si surfaces.
机译:薄壁(500-8000 A)空心圆柱体的垂直边缘发射器阵列是通过Cu-20 at的沉积制备的。在硅柱阵列上放置/ 100 Li合金(Cu_4Li)薄膜,然后对硅芯进行选择性蚀刻。剩下的是一个cu_4Li的空心圆柱体,其发射边缘的厚度由沉积的薄膜厚度决定。另外,由在平坦的Si表面上的SiO_2或Si_3N_4膜中的孔的阵列制造横向边缘发射器。

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