机译:独立式超薄薄膜的泊松比和残余应变
School of Engineering and Applied Sciences. Harvard University Cambridge. MA 02138 USA;
School of Engineering and Applied Sciences. Harvard University Cambridge. MA 02138 USA Department of Mechanical Engineering Massachusetts Institute of Technology Cambridge MA 02139 USA;
Technology Manufacturing Group Intel Corporation Portland OR USA;
Ultra thin film; Freestanding; Poisson's ratio; Residual strain; Residual stress; Transverse wrinkling; Stretched bridges; XeF_2 etch; Copper;
机译:独立式超薄薄膜的残余应力驱动测试技术:弹性行为和残余应变
机译:硅上(111)取向氮化scan薄膜的杨氏模量,泊松比以及残余应力和应变
机译:高温退火对氢化物气相外延生长的自立式GaN薄膜残余应变和弯曲的影响
机译:气体再循环模式下直流电弧等离子体射流在金刚石薄膜中的残余应力分布及其对制备厚的独立金刚石膜的影响
机译:用于独立式金属薄膜的高温实验的MEMS拉伸平台的建模和校准。
机译:化学改性石墨烯薄膜其泊松比可调
机译:高温退火对氢化物气相外延生长的自立式GaN薄膜残余应变和弯曲的影响